Deep level defects involved in MOS device instabilities
نویسنده
چکیده
The physical and chemical nature of several defects involved in metal–oxide–silicon (MOS) device instabilities have become fairly well understood through studies involving electron paramagnetic resonance (EPR). Recent EPR studies suggest that some of these defects play important roles in the negative bias temperature instability (NBTI). This paper reviews recent NBTI EPR studies as well as earlier EPR studies dealing with other MOS instability problems. 2006 Elsevier Ltd. All rights reserved.
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 47 شماره
صفحات -
تاریخ انتشار 2007